Raupapa SiC
Whakaahuatanga
Ko te Silicon carbide (SiC) he pūhui rua o te Rōpū IV-IV, koinei anake te pūhui totoka pūmau i roto i te Rōpū IV o te Ripanga Waahanga, He mea hikoi nui.Ko te SiC he mea tino pai te waiariki, te miihini, te matū me te hiko, na te mea ko ia tetahi o nga rawa pai rawa atu mo te hanga i nga taputapu hiko teitei-te-nui, te auau, me te hiko teitei, ka taea hoki te whakamahi i te SiC hei taputapu taputapu. mo nga diodes puru-marama-marama-a-GaN.I tenei wa, ko te 4H-SiC nga hua auraki i te maakete, a ka wehea te momo kawe ki te momo ahua-waihanga me te momo N.
Āhuatanga
| Tūemi | 2 inihi 4H N-momo | ||
| Diamita | 2inihi (50.8mm) | ||
| Mātotoru | 350+/-25um | ||
| Takotoranga | atu tuaka 4.0˚ ki <1120> ± 0.5˚ | ||
| Kaupapa Papatahi Tuatahi | <1-100> ± 5° | ||
| Papatahi Tuarua Takotoranga | 90.0˚ CW mai i te Primary Flat ± 5.0˚, Si Mata ki runga | ||
| Te Roa Papatahi Tuatahi | 16 ± 2.0 | ||
| Te Roa Papatahi Tuarua | 8 ± 2.0 | ||
| Kōeke | Koeke whakaputa (P) | Koeke Rangahau (R) | Kōeke haurua (D) |
| Te ātete | 0.015~0.028 Ω·cm | <0.1 Ω·cm | <0.1 Ω·cm |
| Kiatotanga Micropipe | ≤ 1 paipa moroiti/ cm² | ≤ 1 0micropipes/ cm² | ≤ 30 paipa moroiti/ cm² |
| Riroke Mata | Si kanohi CMP Ra <0.5nm, C Kanohi Ra <1 nm | N/A, horahanga taea > 75% | |
| TTV | <8 um | <10um | <15 um |
| Kopere | < ±8 um | < ±10um | < ±15um |
| Warp | <15 um | <20 um | <25 um |
| Kapiti | Karekau | Roa whakahiato ≤ 3 mm | Roa whakaemi ≤10mm, |
| Nga karawarawa | ≤ 3 rakuraku, whakaemi | ≤ 5 rakuraku, whakaemi | ≤ 10 rakuraku, whakaemi |
| Papa Hex | mōrahi 6 pereti, | mōrahi 12 pereti, | N/A, horahanga taea > 75% |
| Nga Rohe Polytype | Karekau | Horahanga whakahiato ≤ 5% | Horahanga whakahiato ≤ 10% |
| Te poke | Karekau | ||
